Towards 16 Megapixel Focal Plane Arrays
Identifieur interne : 006E29 ( Main/Repository ); précédent : 006E28; suivant : 006E30Towards 16 Megapixel Focal Plane Arrays
Auteurs : RBID : Pascal:08-0340842Descripteurs français
- Pascal (Inist)
- Déformation mécanique, Détecteur rayonnement, Matrice plan focal, Détecteur IR, Photodétecteur, Matrice détecteur, Plan focal, Superréseau, Semiconducteur III-V, Gallium Arséniure, Indium Arséniure, Composé ternaire, Aluminium Arséniure, Composé binaire, Indium Phosphure, Pixel, Arséniure d'aluminium, Composé III-V, InGaAs/GaAs, GaAs, As Ga, In P, AlGaAs, InP, 0757K, 8560G.
English descriptors
- KwdEn :
- Aluminium Arsenides, Aluminium arsenides, Binary compounds, Dectector arrays, Focal plane arrays, Focal planes, Gallium Arsenides, III-V compound, III-V semiconductors, Indium Arsenides, Indium Phosphides, Infrared detectors, Photodetectors, Pixel, Radiation detectors, Strains, Superlattices, Ternary compounds.
Abstract
Mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) 1024x1024 pixel InGaAs/GaAs/AlGaAs based quantum well infrared photodetector (QWIP) focal planes have been demonstrated with excellent imaging performance. The MWIR QWIP detector array has demonstrated a noise equivalent differential temperature (NEAT) of 17 mK at a 95K operating temperature with f/2.5 optics at 300K background and the LWIR detector array has demonstrated a NEAT of 13 mK at a 70K operating temperature with the same optical and background conditions as the MWIR detector array after the subtraction of system noise. Both MWIR and LWIR focal planes have shown background limited performance (BLIP) at 90K and 70K operating temperatures respectively, with similar optical and background conditions. It is well known that III-V compound semiconductor materials such as GaAs, InP, etc. are easy to grow and process into devices. In addition, III-V compound semiconductors are available in large diameter wafers, up to 8-inches. Thus, III-V compound semiconductor based infrared focal plane technologies such as QWIP, InSb, and strain layer superlattices (SLS) are potential candidates for the development of large format focal planes such as 4096x4096 pixels and larger. In this paper, we will discuss the possibility of extending the infrared detector array size up to 16 megapixels.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Towards 16 Megapixel Focal Plane Arrays</title><author><name sortKey="Gunapala, S D" uniqKey="Gunapala S">S. D. Gunapala</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Jet Propulsion Laboratory, California Institute of Technology 4800 Oak Grove Drive</s1><s2>Pasadena, CA 91109</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Pasadena, CA 91109</wicri:noRegion></affiliation></author><author><name sortKey="Bandara, S V" uniqKey="Bandara S">S. V. Bandara</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Jet Propulsion Laboratory, California Institute of Technology 4800 Oak Grove Drive</s1><s2>Pasadena, CA 91109</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Pasadena, CA 91109</wicri:noRegion></affiliation></author><author><name sortKey="Liu, J K" uniqKey="Liu J">J. K. Liu</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Jet Propulsion Laboratory, California Institute of Technology 4800 Oak Grove Drive</s1><s2>Pasadena, CA 91109</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Pasadena, CA 91109</wicri:noRegion></affiliation></author><author><name sortKey="Mumolo, J M" uniqKey="Mumolo J">J. M. Mumolo</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Jet Propulsion Laboratory, California Institute of Technology 4800 Oak Grove Drive</s1><s2>Pasadena, CA 91109</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Pasadena, CA 91109</wicri:noRegion></affiliation></author><author><name sortKey="Hill, C J" uniqKey="Hill C">C. J. Hill</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Jet Propulsion Laboratory, California Institute of Technology 4800 Oak Grove Drive</s1><s2>Pasadena, CA 91109</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Pasadena, CA 91109</wicri:noRegion></affiliation></author><author><name sortKey="Ting, D Z" uniqKey="Ting D">D. Z. Ting</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Jet Propulsion Laboratory, California Institute of Technology 4800 Oak Grove Drive</s1><s2>Pasadena, CA 91109</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Pasadena, CA 91109</wicri:noRegion></affiliation></author><author><name sortKey="Kurth, E" uniqKey="Kurth E">E. Kurth</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Jet Propulsion Laboratory, California Institute of Technology 4800 Oak Grove Drive</s1><s2>Pasadena, CA 91109</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Pasadena, CA 91109</wicri:noRegion></affiliation></author><author><name sortKey="Woolaway, J" uniqKey="Woolaway J">J. Woolaway</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>FLIR Systems Inc., Indigo Operations, 70 Castilian Dr</s1><s2>Goleta, CA 93117</s2><s3>USA</s3><sZ>8 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Goleta, CA 93117</wicri:noRegion></affiliation></author><author><name sortKey="Levan, P D" uniqKey="Levan P">P. D. Levan</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Air Force Research Laboratory, Kirtland Air Force Base</s1><s2>NM 87117</s2><s3>USA</s3><sZ>9 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">Nouveau-Mexique</region></placeName></affiliation></author><author><name sortKey="Tidrow, M Z" uniqKey="Tidrow M">M. Z. Tidrow</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Missile Defense Agency/DV, 7100 Defense Pentagon</s1><s2>Washington, DC 20301</s2><s3>USA</s3><sZ>10 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Washington, DC 20301</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">08-0340842</idno><date when="2007">2007</date><idno type="stanalyst">PASCAL 08-0340842 INIST</idno><idno type="RBID">Pascal:08-0340842</idno><idno type="wicri:Area/Main/Corpus">006756</idno><idno type="wicri:Area/Main/Repository">006E29</idno></publicationStmt><seriesStmt><idno type="ISSN">0277-786X</idno><title level="j" type="main">Proceedings of SPIE - The International Society for Optical Engineering</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium Arsenides</term><term>Aluminium arsenides</term><term>Binary compounds</term><term>Dectector arrays</term><term>Focal plane arrays</term><term>Focal planes</term><term>Gallium Arsenides</term><term>III-V compound</term><term>III-V semiconductors</term><term>Indium Arsenides</term><term>Indium Phosphides</term><term>Infrared detectors</term><term>Photodetectors</term><term>Pixel</term><term>Radiation detectors</term><term>Strains</term><term>Superlattices</term><term>Ternary compounds</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Déformation mécanique</term><term>Détecteur rayonnement</term><term>Matrice plan focal</term><term>Détecteur IR</term><term>Photodétecteur</term><term>Matrice détecteur</term><term>Plan focal</term><term>Superréseau</term><term>Semiconducteur III-V</term><term>Gallium Arséniure</term><term>Indium Arséniure</term><term>Composé ternaire</term><term>Aluminium Arséniure</term><term>Composé binaire</term><term>Indium Phosphure</term><term>Pixel</term><term>Arséniure d'aluminium</term><term>Composé III-V</term><term>InGaAs/GaAs</term><term>GaAs</term><term>As Ga</term><term>In P</term><term>AlGaAs</term><term>InP</term><term>0757K</term><term>8560G</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) 1024x1024 pixel InGaAs/GaAs/AlGaAs based quantum well infrared photodetector (QWIP) focal planes have been demonstrated with excellent imaging performance. The MWIR QWIP detector array has demonstrated a noise equivalent differential temperature (NEAT) of 17 mK at a 95K operating temperature with f/2.5 optics at 300K background and the LWIR detector array has demonstrated a NEAT of 13 mK at a 70K operating temperature with the same optical and background conditions as the MWIR detector array after the subtraction of system noise. Both MWIR and LWIR focal planes have shown background limited performance (BLIP) at 90K and 70K operating temperatures respectively, with similar optical and background conditions. It is well known that III-V compound semiconductor materials such as GaAs, InP, etc. are easy to grow and process into devices. In addition, III-V compound semiconductors are available in large diameter wafers, up to 8-inches. Thus, III-V compound semiconductor based infrared focal plane technologies such as QWIP, InSb, and strain layer superlattices (SLS) are potential candidates for the development of large format focal planes such as 4096x4096 pixels and larger. In this paper, we will discuss the possibility of extending the infrared detector array size up to 16 megapixels.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0277-786X</s0></fA01><fA05><s2>6660</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Towards 16 Megapixel Focal Plane Arrays</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Infrared systems and photoelectronic technology II : 26-28 August 2007, San Diego, California, USA</s1></fA09><fA11 i1="01" i2="1"><s1>GUNAPALA (S. D.)</s1></fA11><fA11 i1="02" i2="1"><s1>BANDARA (S. V.)</s1></fA11><fA11 i1="03" i2="1"><s1>LIU (J. K.)</s1></fA11><fA11 i1="04" i2="1"><s1>MUMOLO (J. M.)</s1></fA11><fA11 i1="05" i2="1"><s1>HILL (C. J.)</s1></fA11><fA11 i1="06" i2="1"><s1>TING (D. Z.)</s1></fA11><fA11 i1="07" i2="1"><s1>KURTH (E.)</s1></fA11><fA11 i1="08" i2="1"><s1>WOOLAWAY (J.)</s1></fA11><fA11 i1="09" i2="1"><s1>LEVAN (P. D.)</s1></fA11><fA11 i1="10" i2="1"><s1>TIDROW (M. Z.)</s1></fA11><fA12 i1="01" i2="1"><s1>LONGSHORE (Randolph E.)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Jet Propulsion Laboratory, California Institute of Technology 4800 Oak Grove Drive</s1><s2>Pasadena, CA 91109</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="02"><s1>FLIR Systems Inc., Indigo Operations, 70 Castilian Dr</s1><s2>Goleta, CA 93117</s2><s3>USA</s3><sZ>8 aut.</sZ></fA14><fA14 i1="03"><s1>Air Force Research Laboratory, Kirtland Air Force Base</s1><s2>NM 87117</s2><s3>USA</s3><sZ>9 aut.</sZ></fA14><fA14 i1="04"><s1>Missile Defense Agency/DV, 7100 Defense Pentagon</s1><s2>Washington, DC 20301</s2><s3>USA</s3><sZ>10 aut.</sZ></fA14><fA18 i1="01" i2="1"><s1>Society of photo-optical instrumentation engineers</s1><s3>USA</s3><s9>org-cong.</s9></fA18><fA20><s2>66600E.1-66600E.10</s2></fA20><fA21><s1>2007</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA26 i1="01"><s0>978-0-8194-6808-6</s0></fA26><fA43 i1="01"><s1>INIST</s1><s2>21760</s2><s5>354000172843330090</s5></fA43><fA44><s0>0000</s0><s1>© 2008 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>10 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>08-0340842</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Proceedings of SPIE - The International Society for Optical Engineering</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) 1024x1024 pixel InGaAs/GaAs/AlGaAs based quantum well infrared photodetector (QWIP) focal planes have been demonstrated with excellent imaging performance. The MWIR QWIP detector array has demonstrated a noise equivalent differential temperature (NEAT) of 17 mK at a 95K operating temperature with f/2.5 optics at 300K background and the LWIR detector array has demonstrated a NEAT of 13 mK at a 70K operating temperature with the same optical and background conditions as the MWIR detector array after the subtraction of system noise. Both MWIR and LWIR focal planes have shown background limited performance (BLIP) at 90K and 70K operating temperatures respectively, with similar optical and background conditions. It is well known that III-V compound semiconductor materials such as GaAs, InP, etc. are easy to grow and process into devices. In addition, III-V compound semiconductors are available in large diameter wafers, up to 8-inches. Thus, III-V compound semiconductor based infrared focal plane technologies such as QWIP, InSb, and strain layer superlattices (SLS) are potential candidates for the development of large format focal planes such as 4096x4096 pixels and larger. In this paper, we will discuss the possibility of extending the infrared detector array size up to 16 megapixels.</s0></fC01><fC02 i1="01" i2="3"><s0>001B00G57K</s0></fC02><fC02 i1="02" i2="X"><s0>001D03F15</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Déformation mécanique</s0><s5>03</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Strains</s0><s5>03</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Détecteur rayonnement</s0><s5>09</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Radiation detectors</s0><s5>09</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Matrice plan focal</s0><s5>11</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Focal plane arrays</s0><s5>11</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Détecteur IR</s0><s5>12</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Infrared detectors</s0><s5>12</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Photodétecteur</s0><s5>13</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Photodetectors</s0><s5>13</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Matrice détecteur</s0><s5>14</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Dectector arrays</s0><s5>14</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Plan focal</s0><s5>41</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Focal planes</s0><s5>41</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Superréseau</s0><s5>47</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Superlattices</s0><s5>47</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Semiconducteur III-V</s0><s5>50</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>III-V semiconductors</s0><s5>50</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Gallium Arséniure</s0><s2>NC</s2><s2>NA</s2><s5>51</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Gallium Arsenides</s0><s2>NC</s2><s2>NA</s2><s5>51</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Indium Arséniure</s0><s2>NC</s2><s2>NA</s2><s5>52</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Indium Arsenides</s0><s2>NC</s2><s2>NA</s2><s5>52</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Composé ternaire</s0><s5>53</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Ternary compounds</s0><s5>53</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Aluminium Arséniure</s0><s2>NC</s2><s2>NA</s2><s5>54</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Aluminium Arsenides</s0><s2>NC</s2><s2>NA</s2><s5>54</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Composé binaire</s0><s5>55</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Binary compounds</s0><s5>55</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Indium Phosphure</s0><s2>NC</s2><s2>NA</s2><s5>56</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Indium Phosphides</s0><s2>NC</s2><s2>NA</s2><s5>56</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>Pixel</s0><s5>61</s5></fC03><fC03 i1="16" i2="X" l="ENG"><s0>Pixel</s0><s5>61</s5></fC03><fC03 i1="16" i2="X" l="SPA"><s0>Pixel</s0><s5>61</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Arséniure d'aluminium</s0><s2>NK</s2><s5>62</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Aluminium arsenides</s0><s2>NK</s2><s5>62</s5></fC03><fC03 i1="18" i2="X" l="FRE"><s0>Composé III-V</s0><s5>63</s5></fC03><fC03 i1="18" i2="X" l="ENG"><s0>III-V compound</s0><s5>63</s5></fC03><fC03 i1="18" i2="X" l="SPA"><s0>Compuesto III-V</s0><s5>63</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>InGaAs/GaAs</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>GaAs</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>As Ga</s0><s4>INC</s4><s5>75</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>In P</s0><s4>INC</s4><s5>76</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>AlGaAs</s0><s4>INC</s4><s5>83</s5></fC03><fC03 i1="24" i2="3" l="FRE"><s0>InP</s0><s4>INC</s4><s5>84</s5></fC03><fC03 i1="25" i2="3" l="FRE"><s0>0757K</s0><s4>INC</s4><s5>91</s5></fC03><fC03 i1="26" i2="3" l="FRE"><s0>8560G</s0><s4>INC</s4><s5>92</s5></fC03><fN21><s1>217</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>Infrared systems and photoelectronic technology</s1><s2>2</s2><s3>San Diego CA USA</s3><s4>2007</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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